JSAP Annual Meetings Extended Abstracts
Online ISSN : 2436-7613
The 66th JSAP Spring Meeting 2019
Session ID : 11p-PA4-2
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Effect of Gate-Channel Distance Parameters on Electrical Properties of GaInSb Channel HEMT Structure
*Naoyuki KishimotoYuki EndohTakuya HayashiMizuho HiraokaRyuto MachidaAkira EndohHiroki I. Fujishiro
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© 2019 The Japan Society of Applied Physics
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