The 80th JSAP Autumn Meeting 2019
Session ID : 20p-E312-11
Conference information
Host: The Japan Society of Applied Physics
Name : JSAP Autumn Meeting
Number : 80
Location : [in Japanese]
Date : September 18, 2019 - September 21, 2019
Electrical properties of P-doped type IIa diamondby ion implantation followed by annealing
Keywords:
20p-E312-11,
Ion implantation
Details
Article 1st page
