F+ イオン照射によるY2O3表面層の変化

第80回応用物理学会秋季学術講演会

セッションID: 18a-C309-7

会議情報

主催: 公益社団法人応用物理学会

会議名: 応用物理学会秋季学術講演会

回次: 80

開催地: 北海道大学札幌キャンパス

開催日: 2019/09/18 - 2019/09/21

F⁺ イオン照射によるY₂O₃表面層の変化

著者情報

*Kang Hojun
Center for Atomic and Molecular Technologies, Graduate School of Enginerring, Osaka Univ
Ito Tomoko
Center for Atomic and Molecular Technologies, Graduate School of Enginerring, Osaka Univ
Um Junghwan
Memory Etch Technology Team, Samsung Electronics
Kokura Hikaru
Memory Etch Technology Team, Samsung Electronics
Kang Taekyun
Memory Etch Technology Team, Samsung Electronics
Cho Sungil
Memory Etch Technology Team, Samsung Electronics
Park Hyunjung
Memory Etch Technology Team, Samsung Electronics
Isobe Michiro
Center for Atomic and Molecular Technologies, Graduate School of Enginerring, Osaka Univ
Karahashi Kazuhiro
Center for Atomic and Molecular Technologies, Graduate School of Enginerring, Osaka Univ
Hamaguchi Satoshi
Center for Atomic and Molecular Technologies, Graduate School of Enginerring, Osaka Univ

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