The 80th JSAP Autumn Meeting 2019
Session ID : 21a-E301-5
Conference information
Host: The Japan Society of Applied Physics
Name : JSAP Autumn Meeting
Number : 80
Location : [in Japanese]
Date : September 18, 2019 - September 21, 2019
Gallium-nitride-based heterojunction bipolar transistors with two-dimensional hole gas fabricated by epitaxial lift-off process
*Takeru Kumabe, Masaya Ogura, Atsushi Tanaka, Yuto Ando, Hirotaka Watanabe, Shigeyoshi Usami, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano
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