The 80th JSAP Autumn Meeting 2019
Session ID : 19p-E313-9
Conference information
Host: The Japan Society of Applied Physics
Name : JSAP Autumn Meeting
Number : 80
Location : [in Japanese]
Date : September 18, 2019 - September 21, 2019
Dependence of field effect mobility of strained Si/relaxed SiGe/Si(110) p-MOSFET on strained Si layer thickness
*Taisuke Fujisawa, Astushi Onogawa, Daichi Namiuchi, Shingo Saito, Yuichi Sano, Daisuke Izumi, Junji Yamanaka, Kosuke Hara, Kentaro Sawano, Kiyokazu Nakagawa, Keisuke Arimoto
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