JSAP Annual Meetings Extended Abstracts
Online ISSN : 2436-7613
The 81st JSAP Autumn Meeting 2020
Session ID : 10p-Z23-9
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Influence of basal-plane dislocation structures on expansion of single Shockley-type stacking faults in forward-current degradation of 4H-SiC p–i–n diodes
*Shohei HayashiTamotsu YamashitaJunji SenzakiMasaki MiyazatoMina RyoMasaaki MiyajimaTomohisa KatoYoshiyuki YonezawaKazutoshi KojimaHajime Okumura
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© 2020 The Japan Society of Applied Physics
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