JSAP Annual Meetings Extended Abstracts
Online ISSN : 2436-7613
The 69th JSAP Spring Meeting 2022
Session ID : 24a-E302-6
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Formation of Stable GaN MOS Structures Based on Sputter Deposition of SiO2 Dielectrics
*Kentaro OnishiBunichiro MikakeKazuki TomigaharaHidetoshi MizobataMikito NozakiTakuma KobayashiTakayoshi ShimuraHeHeiji Watanabe
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Keywords: 24a-E302-6, GaN
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© 2022 The Japan Society of Applied Physics
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