Understandings of the kinetic balance between N incorporation and removal affected by SiC surface oxidation for 4H-SiC/SiO2 structure in high-temperature N2 (+O2) annealing

Yang Tianlin; Koji Kita

doi:10.11470/jsapmeeting.2022.1.0_2489

The 69th JSAP Spring Meeting 2022

セッションID: 24p-E302-11

DOI https://doi.org/10.11470/jsapmeeting.2022.1.0_2489

会議情報

主催: The Japan Society of Applied Physics

会議名: 応用物理学会春季学術講演会

回次: 69

開催地: ハイブリッド開催（青山学院大学＋オンライン）

開催日: 2022/03/22 - 2022/03/26

Understandings of the kinetic balance between N incorporation and removal affected by SiC surface oxidation for 4H-SiC/SiO₂ structure in high-temperature N₂ (+O₂) annealing

*Yang Tianlin, Koji Kita

著者情報

キーワード: 24p-E302-11, SiC surface nitridation, Nitridation kinetics, High-temperature N2 annealing

会議録・要旨集フリー

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責任著者(Corresponding author)

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