JSAP Annual Meetings Extended Abstracts
Online ISSN : 2436-7613
The 69th JSAP Spring Meeting 2022
Session ID : 25p-P11-7
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Electrical properties of normally-off type AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD Ⅱ
*Keitaro TodaToshiharu KuboTakashi Egawa
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Keywords: 25p-P11-7, GaN, ALD, HEMT
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© 2022 The Japan Society of Applied Physics
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