Excitonic optical properties of deep-UV luminescent AlGaN

Hideaki Murotani; Yoichi Yamada; Hideki Hirayama

doi:10.11470/jsaprev.220405

Abstract

In this article, we review our recent studies on the excitonic optical properties of deep-ultraviolet (UV) luminescent AlGaN. The characteristics of optically pumped stimulated emission from AlGaN-based UV-C multiple quantum wells were studied with respect to the temperature. A change in the mechanism of optical gain formation from excitonic transition to degenerated electron–hole plasma was observed with an increase in the temperature. Excitonic stimulated emission was observed up to 450 K, indicating a low threshold carrier density and high thermal stability at room temperature. Furthermore, lasing spectra with fine structures due to the longitudinal cavity mode were clearly observed, confirming excitonic lasing at room temperature.

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