Exploring novel compound semiconductor nanowires

Abstract

Using molecular beam epitaxial crystal growth, we synthesized large-capacity, high-quality compound semiconductor GaAs-based nanowires on a 2-inch silicon substrate. In addition, we explored novel nanowire materials through the growth of GaInNAsBi compounds, crystal polymorphism including stable zincblende and metastable hexagonal structures, and material conversion by oxidation. These materials show various potential applications as a light source in the near-infrared band or white light, and exhibit nonlinear optical effects.