Toward realizing highly efficient red light-emitting devices using nitride semiconductors

抄録

Nitride semiconductors have enabled highly efficient blue and green LEDs. The research is presently being extended to red emission to complete the RGB spectrum within the same material system. InGaN (as the emitting layer) provides a tunable bandgap energy range from ultraviolet to infrared. Realizing red LEDs or laser diodes with InGaN would enable full-color emission from the same material system. This would enable the integration of these devices on the same wafer and displays potential for inexpensive and high-performance highly advanced micro-LED displays. However, increasing the In content in InGaN to achieve efficient longer-wavelength emissions remains a significant challenge in terms of material growth. This paper reviews the recent progress in InGaN crystal growth and the development of red-emitting devices.