Review
半導体薄膜ホール素子の現状とその応用分野の展開
2005 年 17 巻 3+4 号 p. 225-240
詳細
2005 年 17 巻 3+4 号 p. 225-240
The recent status of research, application, production and the characteristics of InSb and InAs thin film Hall elements are reviewed. Hall elements are now major application area for thin film technology such as vacuum deposition and MBE. Highly sensitive InSb thin filmHall elements formed by vacuum deposition are often applied as magnetic sensors for DC brushless motors used in electronic equipment such as Videotape recorders(VTRs) and personal computers(PCs). InAs thin film and InAs deep quantum well(DQW) Hall elements with high sensitivity and stability over a wide temperature range have been developed by molecular beam epitaxy (MBE). The temperature dependence of InSb single crystal thin films grown on GaAs substrate by MBE were reduced dramatically to very small value by Sn doping as donor impurity. The Hall elements fabricated from the Sn doped InSb single crystal thin films show the very small temperature dependence.
They have potential for the present and future applications as magnetic sensors required by many electronic systems.
