Abstract
Structure and electrical properties of cobalt-containing amorphous hydrogened carbon films were
investigated. Cobalt doped films were prepared by RF discharge of methane gas and DC co-sputtering of
the cobalt target. The structure of the films was examined by transmission electron microscope (TEM) and
Raman spectroscopy. Cobalt atoms form the grain and they are well dispersed in carbon matrix. The
results of Raman spectroscopy show the structure of the carbon is amorphous. But the spectra of the
samples after the heat treatment shows different. D peak position was shifted toward the lower frequency
and this indicated the change of carbon chemical bonding state. Room temperature resitance and
temperature dependence on resistance were also investigated. Resistance at room temperature decreases
drastically with increase of metal concentration. Temperature dependence on resistance with the
concentration variation of the samples indicate , that electrical properties of the samples with strongly
effected by the concentration of embedded cobalt.
