High responsive giant magnetostrictive materials thin film

Abstract

Magnetostrictive properties of Sm-Fe-N and Sm-Fe-C giant magnetostrictive material (GMM) thin film have been systematically investigated in this study. Film samples were prepared by d.c. magnetron sputtering process in Ar-N₂ or Ar-CH₄ gases atmosphere. Saturated magnetostriction of formed thin films was decreased with increasing of N₂ and CH₄ partial pressure because of formation of non-magnetic SmN or SmC₂ phases. Maximum value of magnetostrictive susceptibility is 34 ppm/kAm^-1 was observed in Sm-Fe-C thin film sample with 1.0 vol% CH₄ gas partial pressure. Compressive stress of thin film samples was increased due to the increasing of N₂ and CH₄ gases pressure. The increasing of compressive stress with small N₂ and CH₄ addition amount into thin film samples may influence the increasing of magnetostrictive susceptibility.