Magnetostrictive properties of Sm-Fe-N and Sm-Fe-C giant magnetostrictive material (GMM) thin film have been systematically investigated in this study. Film samples were prepared by d.c. magnetron sputtering process in Ar-N
2 or Ar-CH
4 gases atmosphere. Saturated magnetostriction of formed thin films was decreased with increasing of N
2 and CH
4 partial pressure because of formation of non-magnetic SmN or SmC
2 phases. Maximum value of magnetostrictive susceptibility is 34 ppm/kAm
-1 was observed in Sm-Fe-C thin film sample with 1.0 vol% CH
4 gas partial pressure. Compressive stress of thin film samples was increased due to the increasing of N
2 and CH
4 gases pressure. The increasing of compressive stress with small N
2 and CH
4 addition amount into thin film samples may influence the increasing of magnetostrictive susceptibility.
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