Abstract
Momentum of ion bombardment in sputtering deposition process, which strongly depends on internal stress of thin film, has been evaluated regarding to a new parameter Pi we previously proposed for fine-tuning of mechanical, optical, electrical and magnetic properties. In this study, we demonstrate to estimate the Pi defined as (i/a) p, where i the ion flux, a the atom flux and p the ion’s momentum, by means of Langmuir probe and multi-grid analyzer in a function of negative bias voltage applied on substrates Vsub. As a result, it was found that the Pi was roughly proportional to Vsub except on lower voltage than 30 V. This indicates that the Pi should be measured plasma-diagnostically under incident ion energy as low as plasma potential.
