1989 年 1 巻 1 号 p. 54-59
Optical absorption and photoluminescence spectra were measured at 77K for transition metal (Mn, Co, Ni) doped In2O3 single crystals grown by flux method. Absorption bands were observed at the photon energy of 2.4 and 1.4eV for Mn doped, 2.5eV for Ni doped and 2.1eV for Co doped In2O3 single crystals at 77K. Oscillator strength of about 10-4 were obtained for the absorption bands of Mn and Co doped In2O3. E1+Vodd type ligand field transition at transition metal was considered for the absorptions as the result of the oscillator strength and the temperature dependence of the absorption bands. Photoluminescence lines were observed at the wavenumber of 17544 and 16529cm-1 for Mn doped, 15267cm-1 for Ni doped and 17544cm-1 for Co doped In2O3 by the excitation corresponding to the photon energy of above absorption peaks. About 0.6nsec of very fast luminescence decay time was observed for Mn and Co doped In2O3 at 77K. Futhermore, several luminescence lines were observed at 77K for higher wavenumber excitation near the indirect transition gap energy of In2O3.