Abstract
The recent studies on the diffusion and the heat conduction in SiO2 thin films were reviewed.
The diffusivities of O2 gas in SiO2 films, which were synthesized the with four different methods, i.e., the thermal oxidation, the chemical vapor deposition, the spin-on glass and the sputtering method, were determined by means of the thermal oxidation of silicon substrates. The results revealed that the difference of the manufacturing methods changes the diffusivities and their activation energies.
On the other hand, the spot heating method was developed for measuring the thermal conductivity and the thermal diffusivity of a thin material. The prominent feature is that the geometrial dimensions of a thin sample and the physical properties of a substrate are not required for the analysis. The method could be applied to the material with the thickness of 200μm but should be improved for measuring the thermophysical properties of thin films.
The structure of the four kinds of SiO2 films were estimated from the difference of the activation energies of the diffusion of O2 gas.
