Journal of Advanced Science
Online ISSN : 1881-3917
Print ISSN : 0915-5651
ISSN-L : 0915-5651
Reactivity of nitride thin films deposited by ion-plating process
Masato HASHIMOTO, Takashi UEDA, Takashi GHUJO, Yoshihito MATSUMURA
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Keywords: N2 reaction probability, Plasma, Ion plating
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1998 Volume 10 Issue 2-3 Pages 174

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Abstract

The reactivity of N2 gas molecules with Ti atoms (neutral and/or ion) in TiN film formation has been measured quantitatively. Increasing the fraction of Ti ions in all the evaporeted Ti from 2.7×10-3 to 0.26 enhances the N2 reaction probability up to 102 times and facilitates the formation of stoichiometric TiN.

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