Preparation of GaN by alkoxide process using Ga (i-OC₃H₇)₃ as raw material

Abstract

The Group-III nitrides have attracted much attention for applications of blue light emitters and high temperature electronic devices. The synthesis of single-phase gallium nitride (GaN) powder has been achieved by reacting gallium oxide or gallium triisopropoxide with ammonia (NH₃) flowing in a hot wall tube furnace.