Single crystal growth of Cu-III-Se2 (III=Ga, In) by GRC-SSD method

Takeshi KANAEDA; Keiichiro MATSUMOTO; Takashi MAEDA; Hiroaki MATSUSHITA; Akinori KATSUI

doi:10.2978/jsas.13.54

Single crystal growth of Cu-III-Se₂ (III=Ga, In) by GRC-SSD method

Takeshi KANAEDA, Keiichiro MATSUMOTO, Takashi MAEDA, Hiroaki MATSUSHITA, Akinori KATSUI

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Keywords: CuGaSe₂, CuInSe₂, GRC-SSD method, EPMA, X-ray diffraction, Hall effect

JOURNAL FREE ACCESS

2001 Volume 13 Issue 1-2 Pages 54-55

DOI https://doi.org/10.2978/jsas.13.54

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Abstract

Cd or Zn doped CuInSe₂ and undoped CuGaSe₂ crystals have been grown using synthesis solute diffusion method with controlling the growth rate. The CuGaSe₂ crystals having a single phase were obtained under the same growth condition as CuInSe₂ for the first time. The Cd or Zn doped CuInSe₂ crystals have p-type conduction, in contrast to that of doping Cd or Zn using Brigeman method (n-type conduction).

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