抄録
Germanium and aluminum have been chosen as model substances both for ion-beam-assisted thin film deposition(IBAD) and for reactive ion-beam-assisted deposition(RIBAD) and the qualities of the films(Ge, GeN, Al, AlN) have been examined systematically in the present study. In cases of Ge and Al films formed by irradiating inert-gas ions in IBAD, the highest quality of the films has been obtained under a certain optimum ion-to-atom arrival-rate ratio(ion-to-atom ratio) and the ion energy. The optimum ion-to-atom ratio for IBAD is found to be much smaller than unity for both Ge and Al films. Formation of nitrides(GeN, AlN) by RIBAD has been confirmed by the IR absorption spectra.
