Abstract
The thermal annealing effects of stacking layer Ni/C were studied by using Rutherford back scattering (RBS), optical reflection, scanning electron microscopy (SEM), X-ray diffraction and X-ray reflection methods. In RBS measurement, diffusion phenomena were observed at higher annealing temperature than 350°C. In the other methods, remarkable changes were also observed in respective spectral profiles for the layers annealed at the temperature higher than 500°C. The density of Ni metal film was estimated as 82% of bulk materials.
