Journal of Advanced Science
Online ISSN : 1881-3917
Print ISSN : 0915-5651
ISSN-L : 0915-5651
強磁性体-超伝導体-強磁性体接合を利用した新しい単一磁束量子デバイスの考案
Morishige YONEDAMasaaki NIWAShozo SHINOHARA
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1996 年 8 巻 3-4 号 p. 180-185

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The single-electron device is a quantum effect device which operates by using the single electron tunneling created by a Coulomb blockade. In this analogy, we propose the single quantum flux device which operates by using the single quantum flux tunneling. The single quantum flux transistor consists of the ferromagnet-supercnductor-ferromagnet junction of the sandwich structure. In this paper, we consider the physical mechanisms that lie behind the single quantum flux tunneling, and advanced a theoretical analysis to control this device.

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