1996 年 8 巻 3-4 号 p. 180-185
The single-electron device is a quantum effect device which operates by using the single electron tunneling created by a Coulomb blockade. In this analogy, we propose the single quantum flux device which operates by using the single quantum flux tunneling. The single quantum flux transistor consists of the ferromagnet-supercnductor-ferromagnet junction of the sandwich structure. In this paper, we consider the physical mechanisms that lie behind the single quantum flux tunneling, and advanced a theoretical analysis to control this device.