K添加p型PbTeの作製と熱電特性
1997 年 9 巻 1-2 号 p. 32-37
詳細
1997 年 9 巻 1-2 号 p. 32-37
Single crystals of K-doped p-type PbTe were prepared by Bridgman method. The carrier concentration and Hall mobility were measured from 77 to 300K. The hole concentration was successfully controlled in the range from 8.0×1024 to 4.0×1025m-3 with 1000 to 20000 molppm K at 300K. By calculating κel on the basis of Fermi integration, κph was estimated to be 2.15Wm-1K-1.
By using the observed thermoelectric power and electrical conductivity value and the calculated κ value, figure-of-merits Z of PbTe at 300K were 8.0×10-4K-1 for p-type at a hole concentration of 1.0×1025m-3 (2000 molppm K). The μH monotonously decreased with an increase of carrier concentration. Z remains low due to the low values of μH and μH/κph.
