Abstract
A method for thickness measurement by means of reflection spectroscopy is promising for thickness gauges used in the silicon wafer thinning process. The most important element in thickness measurement instruments is the spectrometer. Here, optimized conditions for spectrometer performance were verified by theoretical estimations. An appropriate commercially available spectrometer was selected by following the estimations, and a thickness gauge with a measurable range for 50 - 5μm and accuracy of 0.01 μm was prototyped. The validity of the spectrometer conditions was confirmed by excellent performance in demonstrations.
