Abstract
Power semiconductors using SiC wafers are superior to Si semiconductors with regard to low loss of electrical power, miniaturization and high efficiency of the power converter, realization of simplified cooling systems, etc. Therefore, SiC power semiconductors are expected to be applied in many fields. However, SiC is a hard and brittle material compared to cubic boron nitride or diamond. The process for slicing of SiC involves use of a multi-wire saw. This study examined the process of SiC slicing with a rocking vibration type wire saw using diamond slurry and resin-coated wire. This method sliced wafers by ductile mode and the damage layer on the surface of the SiC wafer was reduced to 58 nm.
