Study on high-precision slicing of SiC using a multi-wire saw with resin-coated wire

Abstract

SiC wafers have attracted a great deal of attention as substrates for next-generation power semiconductors. However, SiC is a very hard and brittle material. Therefore, it is difficult to slice SiC ingots, and this has resulted in high processing costs. This study was performed to develop a high-speed and high-precision method for slicing SiC wafers using a rocking vibration-type multi-wire saw. Processing by multi-wire saw involves use of a low-concentration diamond slurry and resin-coated wire. Here, the conditions for high-speed and high-precision slicing of SiC wafers were examined, and the experimental results regarding improvement of saw mark and wafer waviness are presented.