Journal of the Japan Society for Abrasive Technology
Online ISSN : 1880-7534
Print ISSN : 0914-2703
ISSN-L : 0914-2703
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Volume 63, Issue 2
Displaying 1-2 of 2 articles from this issue
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  • Development of in situ heat treatment method using a laser heat source with a turning center
    Yohei SHINKAI, Masaki KONDO, Toshiki HIROGAKI, Eiichi AOYAMA
    2019 Volume 63 Issue 2 Pages 87-92
    Published: February 01, 2019
    Released on J-STAGE: August 01, 2019
    DOIhttps://doi.org/10.11420/jsat.63.87
    JOURNAL FREE ACCESS
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    We have developed a novel process integration technology for heat treatment by mounting a fiber laser beam unit on a turning center. We improved the production site working environment using the method for implementing on-machine laser heat treatment securely on recent multi-function machine tools equipped with multi-axis motion control. A diffractive optical element (DOE) optical system was used to create a line-focused beam, and on-machine laser heat treatment was carried out efficiently on various large-area components. Effective irradiation conditions were demonstrated from both experimental and analytical aspects.
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  • Study on high-precision slicing of SiC using a multi-wire saw with resin-coated wire
    Hitoshi SUWABE, Yuhi MIZOTA, Ken-ichi ISHIKAWA
    2019 Volume 63 Issue 2 Pages 93-98
    Published: February 01, 2019
    Released on J-STAGE: August 01, 2019
    DOIhttps://doi.org/10.11420/jsat.63.93
    JOURNAL FREE ACCESS
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    SiC wafers have attracted a great deal of attention as substrates for next-generation power semiconductors. However, SiC is a very hard and brittle material. Therefore, it is difficult to slice SiC ingots, and this has resulted in high processing costs. This study was performed to develop a high-speed and high-precision method for slicing SiC wafers using a rocking vibration-type multi-wire saw. Processing by multi-wire saw involves use of a low-concentration diamond slurry and resin-coated wire. Here, the conditions for high-speed and high-precision slicing of SiC wafers were examined, and the experimental results regarding improvement of saw mark and wafer waviness are presented.
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