Abstract
In case of the heteroepitaxial growth of a GaAs thin film on a Si substrate, one of the technical problems is increase of dislocation density in the GaAs thin film during the cooling process from growth temperature to room temperature. Such increase of dislocation density is caused by the difference of thermal expansion coefficients between GaAs and Si. In this study, the dislocation density in the GaAs layer during the cooling process was numerically analyzed by the three-dimensional finite element method. A dislocation kinetics model called the Haasen-Alexander-Sumino model was used as a constitutive equation for creep. Cooling velocity and thickness of the GaAs layer were changed as parameters, and their effect on the dislocation density was evaluated. The effect of the rapid thermal annealing on the dislocation density was also discussed.
