抄録
The present article introduces that thermal analysis of thin films are possible and useful. Thermal change of crystalline and amorphous indium-tin-oxide (ITO) transparent conducting films was investigated by temperature programmed desorption (TPD) and high-temperature X-ray diffraction (HT-XRD). Water vapor was the main gas released from the all films. Porous crystalline films released more water vapor than those from the dense ones. The thermal crystallization of amorphous films accompanied fast release of large amount of water vapor, which was attributed to disappearance of In-OH and Sn-OH bonds. The in-situ measurement of the crystallization process by HT-XRD analysis revealed that the thermal crystallization could be suppressed by the optimization of water vapor pressure during the sputter-deposition.
https://ror.org/035kpke84 
