高圧力下複分解反応による窒化物硬質材料と半導体物質合成

抄録

High-pressure metathesis reaction is a promising method for synthesizing novel nitride compounds, e.g. multi-component semiconductors and hard materials. The strong nitridation ability under high pressure makes it possible to realize such compounds. In this article, we introduce our attempts to synthesize 5d nitrides (ReN₂, WN and W_2.25N₃) and ternary nitride semiconductors (ZnSnN₂ and MgSnN₂) using the metathesis reaction. This method contributes not only to improvement of crystallinity but also to the synthesis of metastable phases. The high-pressure metathesis reaction may open a way for realizing materials designed by data driven computational approach.