高圧力の科学と技術
Online ISSN : 1348-1940
Print ISSN : 0917-639X
ISSN-L : 0917-639X
特集:高圧力で拓くトポロジカル物質の新規物性
高圧力・強磁場下のナローギャップ半導体における量子輸送現象
秋葉 和人徳永 将史
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ジャーナル フリー

2020 年 30 巻 4 号 p. 260-273

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In this article, we review our exploration of unconventional electronic states near the metal-insulator boundary in black phosphorus and lead telluride, which have long been known as narrow-gap semiconductors with simple crystal structure. In such low carrier systems with high mobility, the energy band structure and physical property can be drastically affected by application of high magnetic field and high pressure. High pressure is a powerful tool to continuously tune the band structure from semiconductor to semimetal without degradation of the mobility.

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© 2020 日本高圧力学会
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