有機金属気相成長GaInPのフォトルミネッセンスの圧力依存性
1994 年 3 巻 3 号 p. 235-240
詳細
1994 年 3 巻 3 号 p. 235-240
High-pressure photoluminescence (PL) studies of ordered Ga0. 5In0. 5P alloys grown on GaAs substrates by metalorganic vapor phase epitaxy (MOVPE) are reviewed. The anomalous reduction in the direct band-gap energy and the high-pressure PL behavior depend on growth temperature and substrate misorientation. The possible explanations for some of the trends and the complexities involved in PL properties in ordered GaInP samples are presented, which include effects of repulsion between theΓ-folded energy states in the CuPt-type ordered structure.
