抄録
The temperature dependences of phase transitions in GaSb, AlSb, GaAs, GaP, InAs, InP, ZnSe, and CdTe are studied by X-ray diffraction measurements under pressure up to 30 GPa at temperatures of 90-300 K. The phase transitions depend on paths in a pressure-temperature phase diagram. The structure of the recovered phase after decompression depends on the ionicity in bonding: amorphous for small ionicity, the stable zincblende structure for large ionicity, and microcrystalline for moderate ionicity. These results are discussed by using a configuration-coordinate model.
