1998 年 7 巻 p. 668-669
Electrical resistance behaviour of Fe-24Mn-6Si shape memory alloy (SMA) was studied up to ∼6 GPa using Opposed Anvil High Pressure Device (OAHPD) at ambient temperature. Electrical resistance increases steeply up to ∼0. 8 GPa followed by a slow decrease up to ∼6 GPa. X-ray diffraction pattern of pressure treated specimens do not show any new lines indicating the absence of any structural transition.