抄録
Homoepitaxial diamond films were grown on (100) natural type Ia diamond anvils using high density microwave plasma enhanced chemical vapor deposition (CVD). The growth morphology of the epitaxial films were compared for substrate temperatures from 1075 to 1365°C and thane precursor concentrations of 1 and 2% in a hydrogen plasma at 90 Torr. The diamond layers were polished to near optical flatness using an industrial grade polycrystalline diamond (PCD) disc attached to a high rpm rotating wheel. Diamond anvils with CVD layers on the tips were tested up to a pressure of 74 GPa without any film deformation. The versatility of the diamond polishing apparatus allows damaged or CVD-grown anvils to be shaped into a beveled-tip geometry for use in ultra-high pressure applications.
