Transient Temperature Rise in Multi-chip Packages

Abstract

This paper describes a simulation model used to predict the transient temperature rise in multichip packages. The model was designed to consider not only heat conduction but also thermal radiation and natural convection as well as simplicity. The calculations were made with the designed model (MODEL 1), in addition to only a heat conduction model (MODEL 2). The experiments were performed for a ceramic substrate, which had capacitor chips. It had a 36 cm² surface area -32 watts heat flow rate. The calculation results with MODEL are in good agreement with the experimental data. However, the results with MODEL 2 are 10 percent higher than those with MODEL 1. It was found that MODEL 1 is very useful for high density multichip package thermal design.