STM Images of Surface Films Produced at Elevated Temperatures

Saburo MATSUOKA; Hiroyuki MASUDA; Yuji IKEDA; Kazuhiro AKAIKE; Yasuo OCHI

doi:10.1299/jsmea1988.35.4_456

Saburo MATSUOKA, Hiroyuki MASUDA, Yuji IKEDA, Kazuhiro AKAIKE, Yasuo OCHI

著者情報

キーワード: Damage Mechanics, Fractography, Scanning Tunneling Microscope, Oxide Layer, Elevated Temperature, Semiconductor

ジャーナルフリー

1992 年 35 巻 4 号 p. 456-461

DOI https://doi.org/10.1299/jsmea1988.35.4_456

詳細

抄録

The scanning tunneling microscope (STM) has an atomic-level resolution. Oxide film is always formed at elevated temperatures in air. Therefore, STM observation of surface films is useful for investigating the basic mechanisms of damage such as oxidation and creep at elevated temperatures. In this study, the oxide films on nickel and iron, and the sulfur-segregated surfaces on iron and SUS304 steel were observed with STM at room temperatures in air. The images of these films were obtained under a high bias voltage such as 2V, in comparison with ordinary voltage such as 20mV. This was justified by the fact that the films were semiconductors.

責任著者(Corresponding author)

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