抄録
Residual stresses in TiN and TiAlN films on steel substrate were investigated by the usual in-lab X-ray equipment and ultra high X-rays of synchrotron radiation. The specimens prepared in this study were single TiN films with different thickness on the stainless steel substrate and single-, double- and multi-layer TiN and TiAlN films deposited on high speed steel substrate by arc-ion plating. The minimum thickness available for the residual stress measurement was 0.8μm by in-lab equipment whereas below 0.1μm by synchrotron radiation. Extremely large compressive residual stresses were found in the films and the level of residual stress was almost constant regardless of the film thickness. Residual stresses in TiAlN films were more than twice larger than those in TiN films, resulting to reduce the average residual stress in the whole film system by making double- or multi-layer film construction comparing to that in the single TiAlN film.
