抄録
The residual stresses and crystallographic structures of Cu/TiN multi-layer films deposited on glass substrates are investigated. The TiN layers are first deposited by arc ion plating onto the substrate, followed by Cu films deposited by plasma coating or RF sputtering. The rystallographic structure and residual stresses in the multi-layer films deposited as a function of the thickness of the TiN layer are then investigated by X-ray diffraction. The TiN layers deposited by arc ion plating on glass substrate are found to exhibit strong {111} orientation. The Cu layers deposited by both plasma coating and RF sputtering on top of the TiN layers are also found to exhibit strong {111} orientation. The two-exposure method is used to evaluate residual stresses in the Cu and TiN layers by measuring lattice strains in two directions determined from the crystal orientation. In the case of RF sputtering, the Cu and TiN layers in the Cu/TiN film are found to exhibit tensile residual stresses of 450〜630 MPa and 230 MPa, respectively. In case of plasma coating, however, the Cu and TiN layers in the Cu/TiN films exhibit tensile residual stresses of 180〜240 MPa and 300 MPa, respectively
