抄録
This paper describes an experimental analysis of surface stress distribution on single crystal silicon (SCS) microstructures using laser Raman spectroscope. A handmade tensile tester was employed to apply a uniaxial tensile stress to SCS specimen with a 270 nm-height and 4 μm-square SCS boss in the gauge section. In room temperature, Raman spectroscope measured surface stress, applied by the tensile tester, around the boss. The stress distribution obtained from two-curve fitting of Raman spectrum was in good agreement with that estimated by finite element analysis (FEA).
