2011.10
Session ID : OS20-3-1
Conference information
OS20-3-1 Evaluation of uniaxial-stress effects on DC characteristics of n-type metal-oxide-semiconductor field-effect transistors
Masaaki Koganemaru, Keisuke Yoshida, Naohiro Tada, Toru Ikeda, Noriyuki Miyazaki, Hajime Tomokage
Author information
Keywords:
Device Simulation,
Electron Mobility Model,
Four-Point Bending,
Mechanical Stress,
nMOSFET
Details
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