The Proceedings of The Computational Mechanics Conference
Online ISSN : 2424-2799
2000.13
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Analysis of Oxidation-induced Stress in Shallow Trench Isolation Structures for Semiconductor Devices
Hideo MIURANorio ISHITSUKANorio SUZUKI
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CONFERENCE PROCEEDINGS FREE ACCESS

Pages 681-682

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Abstract
The buildup of stress during oxidation of a trench isolation structure is analyzed using a finite element method. In this analysis, we considered stress-dependent oxidation model and the viscoelasticity of materials. The parameters that affect the buildup of stress in the structure are temperature and ambient gas during oxidation and the dimensions (width and depth) of the trench structure. Effective ways for reducing stress are discussed based on simulation results in order to improve product reliability.
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© 2000 The Japan Society of Mechanical Engineers
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