計算力学講演会講演論文集
Online ISSN : 2424-2799
会議情報
637 半導体溝型素子分離構造における酸化プロセス誘起応力解析
三浦 英生石塚 典男鈴木 範夫
著者情報
会議録・要旨集 フリー

p. 681-682

詳細
抄録
The buildup of stress during oxidation of a trench isolation structure is analyzed using a finite element method. In this analysis, we considered stress-dependent oxidation model and the viscoelasticity of materials. The parameters that affect the buildup of stress in the structure are temperature and ambient gas during oxidation and the dimensions (width and depth) of the trench structure. Effective ways for reducing stress are discussed based on simulation results in order to improve product reliability.
著者関連情報
© 2000 一般社団法人 日本機械学会
前の記事 次の記事
feedback
Top