層間絶縁膜用ポリイミド膜/Cu界面の剥離靭性評価

抄録

The adhesive fracture energy G_c of the photosensitive polyimide film (PI) on the copper film deposited on silicon wafer was evaluated by the peel test. The displacement rate and temperature dependence on G_c was confirmed, which is attributed to the secondary bonding i.e. van der Waals force. Therefore, G_c was fit to a single master curve using a conversion law by assuming that G_c is dominated by viscoelastic behavior. By obtaining G in the actual redistribution layer structure by FEM analysis, delamination of the interlayer dielectric film on the copper circuit in the structure was evaluated by the master curve of G_c established from the peel test result. As the result of FEM analysis, it was expected that the delamination of the interlayer dielectric film occur at room temperature during the reflow process. The result suggests that the interlayer dielectric film should be designed to improve G_c at 298K.