Applying multiphysics simulation features of Simcenter STAR-CCM+ for semiconductor manufacturing processes

(Examination of the applicability of STAR-CCM+ for SiC-CVD analysis and building ROM for design exploration)

Abstract

Thermal CVD is a promising process for epitaxial growth of silicon carbide (SiC), which is widely used in various types of electric devices these days. For improving CVD processes, CFD have a key role because to understand the kinetics, flow and heat is significantly important. In this paper, we examined the applicability of multiphysics features of Simcenter STAR-CCM+ for a simple 2D SiC-CVD reactor model, which including the coupling of reacting flow and electromagnetic field calculation. Moreover, a simple design exploration with Simcenter HEEDS was performed using a reduced order model (ROM) which is built with Simcenter ROM Builder from the results of 2D CFD.