523 Transitional Temperature Change Characteristics of the Silicon Wafer in the Wafer Process and Numerical Analysis

Abstract

This paper investigates the radiative cooling characteristics of the silicon wafer in vertical heating furnace was examined using experiment and numerical calculation. As the result, the largest cooling speed of the wafers became about 110℃/min, simultaneously examination for the thermal stress seems to be also necessary, because the maximum temperature difference of wafer surface is also considerably big. The numerical simulation showed good correspondence of the experimental result.