SiO₂膜のマイクロスラリージェットエロージョンにおける砥粒硬度およびスラリーpHの影響

抄録

Recently, micro slurry-jet erosion (MSE) test was proposed to the evaluation of the mechanical properties of the hard surfaces. MSE is also expected to be applied to the micro-fabrication like other abrasive technology. Chemical mechanical polishing (CMP) has been one of the key processes in semiconductor production. It uses both of the mechanical and the chemical effects of slurry in order to establish the precise and small damage surfaces. In this study, the effect of the abrasive hardness and the slurry pH on MSE rates were investigated. SiO₂ film was selected as the processed material, which is widely used as the dielectric layer in semiconductor devices. As results, the erosion rates did not correspond to the abrasive hardness, and increased as the slurry pH increased. These properties showed the similarity to the polishing rates of CMP.